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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. july 2009 doc id 15853 rev 1 1/14 14 stb22nm60n, stf22nm60n stp22nm60n, STW22NM60N n-channel 600 v, 0.190 ? , 16 a mdmesh? ii power mosfet in d 2 pak, to-220fp, to-220 and to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this second generation of mdmesh? technology, applies the benefits of the multiple drain process to stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d pw stb22nm60n 650 v < 0.22 ? 16 a 125 w stf22nm60n 650 v < 0.22 ? 16 a 30 w stp22nm60n 650 v < 0.22 ? 16 a 125 w STW22NM60N 650 v < 0.22 ? 16 a 125 w 1 3 1 2 3 1 2 3 d2pak to-220fp to-220 1 2 3 to-247 !-v $ ' 3 table 1. device summary order codes marking package packaging stb22nm60n 22nm60n d2pak tape and reel stf22nm60n 22nm60n to-220fp tube stp22nm60n 22nm60n to-220 tube STW22NM60N 22nm60n to-247 tube www.st.com
contents stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 2/14 doc id 15853 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N electrical ratings doc id 15853 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak to-220 to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 16 16 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 12.8 12.8 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 64 64 (1) a p tot total dissipation at t c = 25 c 125 30 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) tbd mj dv/dt (3) 3. i sd 16 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1 4.2 c/w r thj-amb thermal resistance juncti on-ambient max 62.5 c/w r thj-pcb thermal resistance j unction-pcb max 30 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 4/14 doc id 15853 rev 1 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 na v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.190 0.220 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1300 90 3 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 480 v, v gs = 0 - tbd - pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 480 v, v gs = 0 - tbd - pf r g gate input resistance f=1 mhz open drain - 4 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 12 a, v gs = 10 v (see figure 3) - 35 tbd tbd - nc nc nc
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N electrical characteristics doc id 15853 rev 1 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 12 a, r g = 4.7 ?, v gs = 10 v (see figure 2) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 16 64 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 - tbd v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 60 v (see figure 4) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 4) - tbd tbd tbd ns c a
test circuits stb22nm60n, stf2 2nm60n, stp22nm60n, STW22NM60N 6/14 doc id 15853 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N package mechanical data doc id 15853 rev 1 7/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 8/14 doc id 15853 rev 1 d2pak (to-263) mechanical data dim h c n i m m min typ max min typ max 1 8 1 . 0 3 7 1 . 0 0 6 . 4 0 4 . 4 a 9 0 0 . 0 1 0 0 . 0 3 2 . 0 3 0 . 0 1 a 7 3 0 . 0 7 2 0 . 0 3 9 . 0 0 7 . 0 b 7 6 0 . 0 5 4 0 . 0 0 7 . 1 4 1 . 1 2 b 4 2 0 . 0 7 1 0 . 0 0 6 . 0 5 4 . 0 c 3 5 0 . 0 8 4 0 . 0 6 3 . 1 3 2 . 1 2 c 8 6 3 . 0 2 5 3 . 0 5 3 . 9 5 9 . 8 d 5 9 2 . 0 0 5 . 7 1 d 9 0 4 . 0 4 9 3 . 0 0 4 . 0 1 0 1 e 4 3 3 . 0 0 5 . 8 1 e 1 . 0 4 5 . 2 e 8 0 2 . 0 2 9 1 . 0 8 2 . 5 8 8 . 4 1 e 4 2 6 . 0 0 9 5 . 0 5 8 . 5 1 5 1 h 6 0 1 . 0 9 9 0 . 0 9 6 . 2 9 4 . 2 1 j 0 1 1 . 0 0 9 0 . 0 9 7 . 2 9 2 . 2 l 5 5 0 . 0 5 0 . 0 0 4 . 1 7 2 . 1 1 l 9 6 0 . 0 1 5 0 . 0 5 7 . 1 0 3 . 1 2 l 6 1 0 . 0 4 . 0 r 8 0 8 0 2 v 0079457_m
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N package mechanical data doc id 15853 rev 1 9/14 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
package mechanical data stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 10/14 doc id 15853 rev 1 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.019 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 3 9 3 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 .90 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q 2.65 2.95 0.104 0.116
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N package mechanical data doc id 15853 rev 1 11/14 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
packaging mechanical data stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 12/14 doc id 15853 rev 1 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
stb22nm60n, stf22nm60n, stp22nm6 0n, STW22NM60N revision history doc id 15853 rev 1 13/14 6 revision history table 8. document revision history date revision changes 02-jul-2009 1 first release
stb22nm60n, stf22nm60n, stp22nm60n, STW22NM60N 14/14 doc id 15853 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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